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Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes

dc.contributor.authorGao, R.
dc.contributor.authorJi, Zhigang
dc.contributor.authorHatta, S.M.
dc.contributor.authorZhang, J.F.
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorZhang, W.
dc.contributor.authorDuan, M.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorBi, J.
dc.contributor.authorLiu, M.
dc.date.accessioned2021-10-23T10:54:37Z
dc.date.available2021-10-23T10:54:37Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26639
dc.sourceIIOimport
dc.titlePredictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage778
dc.source.endpage781
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2016
dc.source.conferencelocationSan Francisco CA USA
imec.availabilityPublished - open access


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