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Removal of Si-O, Si-C and Si-F by hydrogen bake after reactive ion etching on the silicon surface

dc.contributor.authorKim, Young-Chang
dc.contributor.authorCaymax, Matty
dc.contributor.authorBender, Hugo
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-09-30T12:19:53Z
dc.date.available2021-09-30T12:19:53Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2665
dc.sourceIIOimport
dc.titleRemoval of Si-O, Si-C and Si-F by hydrogen bake after reactive ion etching on the silicon surface
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.conferenceAmerican Vacuum Society 45th International Symposium; 2-6 Nov. 1998; Baltimore, MD, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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