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The formation and removal of residue formed during TiN fluorocarbon plasma etching

dc.contributor.authorKim, Young-Chang
dc.contributor.authorConard, Thierry
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-30T12:20:28Z
dc.date.available2021-09-30T12:20:28Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2667
dc.sourceIIOimport
dc.titleThe formation and removal of residue formed during TiN fluorocarbon plasma etching
dc.typeProceedings paper
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage610
dc.source.endpage616
dc.source.conferenceProceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing
dc.source.conferencedate31/08/1997
dc.source.conferencelocationParis France
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 97-35


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