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Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness
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Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness
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Date
1998
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APA
Chicago
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IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kol'dyaev, Victor
;
Clerix, Andre
;
Deferm, Ludo
;
Van Overstraeten, Roger
Journal
Journal of Applied Physics
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1923
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Acq. date: 2026-01-09
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Views
1923
since deposited on 2021-09-30
1
last month
Acq. date: 2026-01-09
Citations