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ABI tool performance confirmation by NXE3300 printing results for native EUV blank defects at 16nm half pitch

dc.contributor.authorJonckheere, Rik
dc.contributor.authorYamane, Takeshi
dc.contributor.authorTakagi, Noriaki
dc.contributor.authorWatanabe, Hidehiro
dc.contributor.authorBeral, Christophe
dc.date.accessioned2021-10-23T11:33:57Z
dc.date.available2021-10-23T11:33:57Z
dc.date.issued2016-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26786
dc.sourceIIOimport
dc.titleABI tool performance confirmation by NXE3300 printing results for native EUV blank defects at 16nm half pitch
dc.typeProceedings paper
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorBeral, Christophe
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.contributor.orcidimecBeral, Christophe::0000-0003-1356-9186
dc.source.peerreviewno
dc.source.conferenceInternational Symposium on Extreme Ultraviolet Lithography - EUVL
dc.source.conferencedate24/10/2016
dc.source.conferencelocationHiroshima Japan
dc.identifier.urlhttp://eidec.co.jp/EUVLSymp2016/
imec.availabilityPublished - imec


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