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On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects
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Authors
Kaczer, Ben
;
Amoroso, S. M.
;
Hussin, R.
;
Asenov, A.
;
Franco, Jacopo
;
Weckx, Pieter
;
Roussel, Philippe
;
Grasser, T.
;
Rzepa, G.
;
Horiguchi, Naoto
Conference
International Integrated Reliability Workshop - IIRW
Title
On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects
Publication type
Proceedings paper
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