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On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects

dc.contributor.authorKaczer, Ben
dc.contributor.authorAmoroso, S. M.
dc.contributor.authorHussin, R.
dc.contributor.authorAsenov, A.
dc.contributor.authorFranco, Jacopo
dc.contributor.authorWeckx, Pieter
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGrasser, T.
dc.contributor.authorRzepa, G.
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-23T11:36:31Z
dc.date.available2021-10-23T11:36:31Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26795
dc.sourceIIOimport
dc.titleOn the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.conferenceInternational Integrated Reliability Workshop - IIRW
dc.source.conferencedate9/10/2016
dc.source.conferencelocationFallen Leaf Lake, CA USA
imec.availabilityPublished - imec


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