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Electrical properties of SiGe epitaxial layers for photovoltaic application as studied by scanning electron microscopical methods

dc.contributor.authorKruger, O.
dc.contributor.authorSeifert, W.
dc.contributor.authorKittler, M.
dc.contributor.authorGutjahr, A.
dc.contributor.authorKonuma, M.
dc.contributor.authorSaid, Khalid
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-09-30T12:24:23Z
dc.date.available2021-09-30T12:24:23Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2682
dc.sourceIIOimport
dc.titleElectrical properties of SiGe epitaxial layers for photovoltaic application as studied by scanning electron microscopical methods
dc.typeProceedings paper
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage509
dc.source.endpage518
dc.source.conferenceBeam Injection Assessment of Defects in Semiconductors - BIADS. Proceeding of the 5th International Workshop
dc.source.conferencedate30/08/1998
dc.source.conferencelocationSchloss Wulkow Germany
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vols. 63-64


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