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Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorHopf, Toby
dc.contributor.authorMannaert, Geert
dc.contributor.authorTao, Zheng
dc.contributor.authorWaite, A.
dc.contributor.authorCournoyer, J.
dc.contributor.authorBorniquel, J.
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorKim, Min-Soo
dc.contributor.authorKubicek, Stefan
dc.contributor.authorChew, Soon Aik
dc.contributor.authorDevriendt, Katia
dc.contributor.authorSchram, Tom
dc.contributor.authorDemuynck, Steven
dc.contributor.authorVariam, N.
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Dan
dc.date.accessioned2021-10-23T11:47:39Z
dc.date.available2021-10-23T11:47:39Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26830
dc.sourceIIOimport
dc.titleImprovement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation
dc.typeMeeting abstract
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage460
dc.source.endpage463
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate3/12/2016
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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