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The effect of forming gas annealing on capacitance-voltage hysteresis in the high- $j/In0.53Ga0.47As metal-oxide-semiconductor system

dc.contributor.authorLin, Jun
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorPovey, Ian M.
dc.contributor.authorSheehan, Brendan
dc.contributor.authorFranco, Jacopo
dc.contributor.authorHurley, Paul K.
dc.date.accessioned2021-10-23T12:14:41Z
dc.date.available2021-10-23T12:14:41Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26913
dc.sourceIIOimport
dc.titleThe effect of forming gas annealing on capacitance-voltage hysteresis in the high- $j/In0.53Ga0.47As metal-oxide-semiconductor system
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.source.peerreviewyes
dc.source.conference19th Workshop on Dielectrics in Microelectronics - WoDiM
dc.source.conferencedate27/06/2016
dc.source.conferencelocationAci Castello Italy
imec.availabilityPublished - imec


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