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Processing technologies for advanced Ge devices

dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorSchulze, Andreas
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCott, Daire
dc.contributor.authorMitard, Jerome
dc.contributor.authorPorret, Clément
dc.contributor.authorMertens, Hans
dc.contributor.authorRyan, Paul
dc.contributor.authorWall, John
dc.contributor.authorMatney, Kevin
dc.contributor.authorWormington, Matthew
dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T12:19:49Z
dc.date.available2021-10-23T12:19:49Z
dc.date.issued2016-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26927
dc.sourceIIOimport
dc.titleProcessing technologies for advanced Ge devices
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage491
dc.source.endpage503
dc.source.conferenceSiGe, Ge, and Related Materials: Materials, Processing, and Devices 7
dc.source.conferencedate2/10/2016
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/75/8/491.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 75, Issue 8


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