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Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

dc.contributor.authorMa, Jigang
dc.contributor.authorChai, Zheng
dc.contributor.authorZhang, Weidong
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorZhang, Jiang F.
dc.contributor.authorJi, Z.
dc.contributor.authorBenbakhti, B.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Malgorzata
dc.date.accessioned2021-10-23T12:22:18Z
dc.date.available2021-10-23T12:22:18Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26934
dc.sourceIIOimport
dc.titleIdentify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement
dc.typeProceedings paper
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecGovoreanu, Bogdan::0000-0001-7210-2979
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage564
dc.source.endpage567
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate3/12/2016
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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