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Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses

dc.contributor.authorMacambira, Christian M.
dc.contributor.authorItocazu, Victor T.
dc.contributor.authorAlmeida, Luciano M.
dc.contributor.authorMartino, Joao
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-23T12:22:58Z
dc.date.available2021-10-23T12:22:58Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26936
dc.sourceIIOimport
dc.titleGround plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conference31st Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate29/08/2016
dc.source.conferencelocationBrasilia Brazil
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7731326/
imec.availabilityPublished - open access


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