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Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

dc.contributor.authorMertens, Hans
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSchram, Tom
dc.contributor.authorKunnen, Eddy
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorDekkers, Harold
dc.contributor.authorHopf, Toby
dc.contributor.authorWostyn, Kurt
dc.contributor.authorDevriendt, Katia
dc.contributor.authorChew, Soon Aik
dc.contributor.authorKim, Min-Soo
dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorRosseel, Erik
dc.contributor.authorMannaert, Geert
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDemuynck, Steven
dc.contributor.authorDangol, Anish
dc.contributor.authorBosman, Niels
dc.contributor.authorGeypen, Jef
dc.contributor.authorCarolan, Patrick
dc.contributor.authorBender, Hugo
dc.contributor.authorBarla, Kathy
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Dan
dc.date.accessioned2021-10-23T12:49:01Z
dc.date.available2021-10-23T12:49:01Z
dc.date.issued2016-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27006
dc.sourceIIOimport
dc.titleVertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorDangol, Anish
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorCarolan, Patrick
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecCarolan, Patrick::0000-0001-5931-3093
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage524
dc.source.endpage527
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate3/12/2016
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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