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Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si

dc.contributor.authorMitard, Jerome
dc.contributor.authorZhang, En Xia
dc.contributor.authorFleetwood, Daniel
dc.contributor.authorHachtel, Jordan
dc.contributor.authorLiang, Chundong
dc.contributor.authorReed, Robert
dc.contributor.authorAlles, Michael
dc.contributor.authorSchrimpf, Ronald
dc.contributor.authorLinten, Dimitri
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorChisholm, Matthew
dc.contributor.authorPantelides, Sokrates
dc.date.accessioned2021-10-23T12:53:12Z
dc.date.available2021-10-23T12:53:12Z
dc.date.issued2016-07
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27017
dc.sourceIIOimport
dc.titleTotal ionizing dose effects on strained Ge pMOS FinFETs on bulk Si
dc.typeMeeting abstract
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.conferenceIEEE Nuclear Space and Radiation Conference - NSREC
dc.source.conferencedate13/07/2016
dc.source.conferencelocationPortland, OR USA
imec.availabilityPublished - imec


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