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Atomically controlled processing for Ge CVD epitaxial growth

dc.contributor.authorMurota, Junichi
dc.contributor.authorYamamoto, Yuchi
dc.contributor.authorCostina, Ioan
dc.contributor.authorTillack, Bernd
dc.contributor.authorLe Thanh, Vin
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-23T13:09:16Z
dc.date.available2021-10-23T13:09:16Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27060
dc.sourceIIOimport
dc.titleAtomically controlled processing for Ge CVD epitaxial growth
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage317
dc.source.endpage320
dc.source.conferenceIEEE 13th International Conference on Solid-State and Integrated-Circuit Technology - ICSICT
dc.source.conferencedate25/10/2016
dc.source.conferencelocationHangzhou China
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998908/
imec.availabilityPublished - imec


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