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Low temperature effect on strained and relaxed Ge pFinFETs STI last processes

dc.contributor.authorOliveira, Alberto
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-23T13:22:29Z
dc.date.available2021-10-23T13:22:29Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27094
dc.sourceIIOimport
dc.titleLow temperature effect on strained and relaxed Ge pFinFETs STI last processes
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage213
dc.source.endpage218
dc.source.conferenceHigh Purity and High Mobility Semiconductors 14
dc.source.conferencedate2/10/2016
dc.source.conferencelocationPennington USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/75/4/213.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol 75, Issue 4


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