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Effects of border traps on transfer curve hysteresis and split-CV mobility measurement in InGaAs quantum-well MOSFETs

dc.contributor.authorPavan, Paolo
dc.contributor.authorPuglisi, F. M.
dc.contributor.authorZagni, Nicolo
dc.contributor.authorAlian, AliReza
dc.contributor.authorThean, Aaron
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVerzellesi, G.
dc.date.accessioned2021-10-23T13:36:08Z
dc.date.available2021-10-23T13:36:08Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27127
dc.sourceIIOimport
dc.titleEffects of border traps on transfer curve hysteresis and split-CV mobility measurement in InGaAs quantum-well MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.conferenceCompound Semiconductor Week
dc.source.conferencedate26/06/2016
dc.source.conferencelocationToyama Japan
imec.availabilityPublished - imec


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