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Effects of border traps on transfer curve hysteresis and split-CV mobility measurement in InGaAs quantum-well MOSFETs
Publication:
Effects of border traps on transfer curve hysteresis and split-CV mobility measurement in InGaAs quantum-well MOSFETs
Date
2016
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pavan, Paolo
;
Puglisi, F. M.
;
Zagni, Nicolo
;
Alian, AliReza
;
Thean, Aaron
;
Collaert, Nadine
;
Verzellesi, G.
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1888
since deposited on 2021-10-23
Acq. date: 2025-10-24
Citations
Metrics
Views
1888
since deposited on 2021-10-23
Acq. date: 2025-10-24
Citations