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Probing defects generation during stress in high- $j/metal gate FinFETs by random telegraph noise characterization
Publication:
Probing defects generation during stress in high- $j/metal gate FinFETs by random telegraph noise characterization
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Date
2016
Proceedings Paper
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35091.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Puglisi, Francesco Maria
;
Costantini, Felipe
;
Kaczer, Ben
;
Larcher, Luca
;
Pavan, Paolo
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1946
since deposited on 2021-10-23
Acq. date: 2025-12-10
Citations
Metrics
Views
1946
since deposited on 2021-10-23
Acq. date: 2025-12-10
Citations