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Probing defects generation during stress in high- $j/metal gate FinFETs by random telegraph noise characterization

dc.contributor.authorPuglisi, Francesco Maria
dc.contributor.authorCostantini, Felipe
dc.contributor.authorKaczer, Ben
dc.contributor.authorLarcher, Luca
dc.contributor.authorPavan, Paolo
dc.date.accessioned2021-10-23T13:53:11Z
dc.date.available2021-10-23T13:53:11Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27169
dc.sourceIIOimport
dc.titleProbing defects generation during stress in high- $j/metal gate FinFETs by random telegraph noise characterization
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage252
dc.source.endpage255
dc.source.conference46th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate12/09/2016
dc.source.conferencelocationLausanne Switzerland
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7599633/
imec.availabilityPublished - open access


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