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Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

dc.contributor.authorRosseel, Erik
dc.contributor.authordhayalan,
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorProfijt, Harald
dc.contributor.authorKohen, David
dc.contributor.authorKubicek, Stefan
dc.contributor.authorChiarella, Thomas
dc.contributor.authorYu, Hao
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Dan
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.contributor.authorBartlett, Gregory
dc.contributor.authorMargetis, Joe
dc.contributor.authorBhargava, Nupur
dc.contributor.authorTolle, John
dc.date.accessioned2021-10-23T14:22:26Z
dc.date.available2021-10-23T14:22:26Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27237
dc.sourceIIOimport
dc.titleSelective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
dc.typeMeeting abstract
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage2003
dc.source.conferencePRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices
dc.source.conferencedate2/10/2016
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ma.ecsdl.org/content/MA2016-02/30/2003.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Meeting Abstracts; Vol. MA2016-02


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