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Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

dc.contributor.authorRosseel, Erik
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorProfijt, Harald
dc.contributor.authorKohen, David
dc.contributor.authorKubicek, Stefan
dc.contributor.authorChiarella, Thomas
dc.contributor.authorYu, Hao
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Dan
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.contributor.authorBartlett, Greg
dc.contributor.authorMargetis, Joe
dc.contributor.authorBhargava, Naipur
dc.contributor.authorTolle, John
dc.date.accessioned2021-10-23T14:23:00Z
dc.date.available2021-10-23T14:23:00Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27238
dc.sourceIIOimport
dc.titleSelective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage347
dc.source.endpage359
dc.source.conferenceSiGe, Ge, and Related Materials: Materials, Processing, and Devices 7
dc.source.conferencedate2/10/2016
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/75/8/347.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 75, Issue 8


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