Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

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Authors
Rosseel, Erik; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Profijt, Harald; Kohen, David; Kubicek, Stefan; Chiarella, Thomas; Yu, Hao; Horiguchi, Naoto; Mocuta, Dan; Barla, Kathy; Thean, Aaron; Bartlett, Greg; Margetis, Joe; Bhargava, Naipur; Tolle, John
Conference
SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7
Title
Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
Publication type
Proceedings paper
Embargo date
9999-12-31
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