Publication:

Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

Date

2016

Proceedings Paper

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34481.pdf 562.89 KB

Author(s)

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Dhayalan, Sathish Kumar

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Hikavyy, Andriy

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Profijt, Harald

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Kubicek, Stefan

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Chiarella, Thomas

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Horiguchi, Naoto

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Bhargava, Naipur

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