Publication:

Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

Date

2016
Proceedings Paper
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dc.contributor.authorRosseel, Erik
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorProfijt, Harald
dc.contributor.authorKohen, David
dc.contributor.authorKubicek, Stefan
dc.contributor.authorChiarella, Thomas
dc.contributor.authorYu, Hao
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Dan
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.contributor.authorBartlett, Greg
dc.contributor.authorMargetis, Joe
dc.contributor.authorBhargava, Naipur
dc.contributor.authorTolle, John
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-23T14:23:00Z
dc.date.available2021-10-23T14:23:00Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27238
dc.identifier.urlhttp://ecst.ecsdl.org/content/75/8/347.abstract
dc.source.beginpage347
dc.source.conferenceSiGe, Ge, and Related Materials: Materials, Processing, and Devices 7
dc.source.conferencedate2/10/2016
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage359
dc.title

Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

dc.typeProceedings paper
dspace.entity.typePublication
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