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Wet selective SiGe etch to enable Ge nanowire formation.

dc.contributor.authorSebaai, Farid
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorWostyn, Kurt
dc.contributor.authorRip, Jens
dc.contributor.authorYukifumi, Yoshida
dc.contributor.authorLieten, Ruben
dc.contributor.authorBilodeau, Steven
dc.contributor.authorCooper, Emanuel
dc.date.accessioned2021-10-23T14:44:54Z
dc.date.available2021-10-23T14:44:54Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27288
dc.sourceIIOimport
dc.titleWet selective SiGe etch to enable Ge nanowire formation.
dc.typeProceedings paper
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorLieten, Ruben
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3
dc.source.endpage7
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIII - UCPSS
dc.source.conferencedate11/09/2016
dc.source.conferencelocationKnokke-Heist Belgium
dc.identifier.urlhttp://www.scientific.net/SSP.255.3
imec.availabilityPublished - open access


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