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A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer NMOSFETs

dc.contributor.authorSharma, P.
dc.contributor.authorTyaginov, S.
dc.contributor.authorRauch, S.E.
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorMakarov, A.
dc.contributor.authorVexler, M.I.
dc.contributor.authorGrasser, T.
dc.date.accessioned2021-10-23T14:48:24Z
dc.date.available2021-10-23T14:48:24Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27296
dc.sourceIIOimport
dc.titleA drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer NMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage428
dc.source.endpage431
dc.source.conference46th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate12/09/2016
dc.source.conferencelocationLausanne Switzerland
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7599677/
imec.availabilityPublished - open access


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