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Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections

dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Deun, Rik
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-23T14:52:20Z
dc.date.available2021-10-23T14:52:20Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27305
dc.sourceIIOimport
dc.titleHighly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections
dc.typeMeeting abstract
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.conference9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically
dc.source.conferencedate11/01/2016
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - imec


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