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Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory

dc.contributor.authorSubirats, Alexandre
dc.contributor.authorCapogreco, Elena
dc.contributor.authorDegraeve, Robin
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorFurnemont, Arnaud
dc.date.accessioned2021-10-23T15:18:39Z
dc.date.available2021-10-23T15:18:39Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27361
dc.sourceIIOimport
dc.titleChannel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory
dc.typeProceedings paper
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage6C.4
dc.source.conferenceIEEE Reliability Physics Symposium - IRPS
dc.source.conferencedate17/04/2016
dc.source.conferencelocationPasadena, CA USA
imec.availabilityPublished - open access


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