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Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6

dc.contributor.authorVohra, Anurag
dc.contributor.authorLoo, Roger
dc.contributor.authorKohen, David
dc.contributor.authorMargetis, Joe
dc.contributor.authorTolle, John
dc.contributor.authorStange, Daniela
dc.contributor.authorBuca, Dan
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-23T16:54:44Z
dc.date.available2021-10-23T16:54:44Z
dc.date.issued2016-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27556
dc.sourceIIOimport
dc.titleBenchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6
dc.typeMeeting abstract
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage20
dc.source.endpage21
dc.source.conferenceJSPS - FZ-Jülich Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"
dc.source.conferencedate24/11/2016
dc.source.conferencelocationJülich Germany
imec.availabilityPublished - imec


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