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Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs

dc.contributor.authorWaltl, Michael
dc.contributor.authorGrill, Alexander
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorMitard, Jerome
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-23T16:58:50Z
dc.date.available2021-10-23T16:58:50Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27564
dc.sourceIIOimport
dc.titleNanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.conferenceInternational Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2016
dc.source.conferencelocationPasadena, Ca USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7574644
imec.availabilityPublished - imec


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