Evaluation of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, Raman spectroscopy and electrical data
dc.contributor.author | McNally, P. J. | |
dc.contributor.author | Curley, J. W. | |
dc.contributor.author | Bolt, M. | |
dc.contributor.author | Reader, A. | |
dc.contributor.author | De Wolf, Ingrid | |
dc.contributor.author | Tuomi, T. | |
dc.contributor.author | Rantamäki, R. | |
dc.contributor.author | Danilewski, A. N. | |
dc.date.accessioned | 2021-10-01T08:30:06Z | |
dc.date.available | 2021-10-01T08:30:06Z | |
dc.date.issued | 1998 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/2761 | |
dc.source | IIOimport | |
dc.title | Evaluation of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, Raman spectroscopy and electrical data | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | De Wolf, Ingrid | |
dc.source.peerreview | no | |
dc.source.conference | 2nd International Conference on Materials for Microelectronics; 14-15 Sept. 1998; Bordeaux, France. | |
dc.source.conferencelocation | ||
imec.availability | Published - imec |
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