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Evaluation of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, Raman spectroscopy and electrical data

dc.contributor.authorMcNally, P. J.
dc.contributor.authorCurley, J. W.
dc.contributor.authorBolt, M.
dc.contributor.authorReader, A.
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorTuomi, T.
dc.contributor.authorRantamäki, R.
dc.contributor.authorDanilewski, A. N.
dc.date.accessioned2021-10-01T08:30:06Z
dc.date.available2021-10-01T08:30:06Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2761
dc.sourceIIOimport
dc.titleEvaluation of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, Raman spectroscopy and electrical data
dc.typeOral presentation
dc.contributor.imecauthorDe Wolf, Ingrid
dc.source.peerreviewno
dc.source.conference2nd International Conference on Materials for Microelectronics; 14-15 Sept. 1998; Bordeaux, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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