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Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability
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1923 since deposited on 2021-10-24
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Acq. date: 2025-10-24
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Views
1923 since deposited on 2021-10-24
416item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations