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Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability

dc.contributor.authorArimura, Hiroaki
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCott, Daire
dc.contributor.authorDekkers, Harold
dc.contributor.authorLoo, Roger
dc.contributor.authorMitard, Jerome
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorWostyn, Kurt
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorChiu, Eddie
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorFavia, Paola
dc.contributor.authorVancoille, Eric
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-24T02:53:02Z
dc.date.available2021-10-24T02:53:02Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27762
dc.sourceIIOimport
dc.titlePerformance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability
dc.typeProceedings paper
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorVancoille, Eric
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage196
dc.source.endpage197
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate5/06/2017
dc.source.conferencelocationKyoto Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998169/
imec.availabilityPublished - imec


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