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dc.contributor.authorBeyne, Eric
dc.contributor.authorKim, Soon-Wook
dc.contributor.authorPeng, Lan
dc.contributor.authorHeylen, Nancy
dc.contributor.authorDe Messemaeker, Joke
dc.contributor.authorOkudur, Oguzhan Orkut
dc.contributor.authorPhommahaxay, Alain
dc.contributor.authorKim, Tae-Gon
dc.contributor.authorStucchi, Michele
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorMiller, Andy
dc.contributor.authorBeyer, Gerald
dc.date.accessioned2021-10-24T02:59:15Z
dc.date.available2021-10-24T02:59:15Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27845
dc.sourceIIOimport
dc.titleScalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology
dc.typeProceedings paper
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorKim, Soon-Wook
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorDe Messemaeker, Joke
dc.contributor.imecauthorOkudur, Oguzhan Orkut
dc.contributor.imecauthorPhommahaxay, Alain
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorVelenis, Dimitrios
dc.contributor.imecauthorMiller, Andy
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecOkudur, Oguzhan Orkut::0000-0002-4790-7772
dc.contributor.orcidimecDe Messemaeker, Joke::0000-0002-4872-0176
dc.contributor.orcidimecPhommahaxay, Alain::0000-0001-8672-2386
dc.contributor.orcidimecMiller, Andy::0000-0001-7048-2242
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage729
dc.source.endpage732
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate2/12/2017
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8268486/
imec.availabilityPublished - imec


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