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Hybrid copper dielectric direct bonding of 200mm CMOS wafers with five metal levels: morphologic, electrical and reliability characterization

dc.contributor.authorCavaco, Celso
dc.contributor.authorPeng, Lan
dc.contributor.authorGuerrieri, Stefano
dc.contributor.authorOsman, Haris
dc.date.accessioned2021-10-24T03:20:03Z
dc.date.available2021-10-24T03:20:03Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27985
dc.sourceIIOimport
dc.titleHybrid copper dielectric direct bonding of 200mm CMOS wafers with five metal levels: morphologic, electrical and reliability characterization
dc.typeProceedings paper
dc.contributor.imecauthorCavaco, Celso
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorOsman, Haris
dc.contributor.orcidimecCavaco, Celso::0000-0001-9079-338X
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.source.peerreviewyes
dc.source.conferenceInternational Wafer-Level Packaging Conference - IWLP
dc.source.conferencedate24/10/2017
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - imec


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