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vfTLP characteristics of ESD diodes in bulk Si gate-all-around vertically stacked horizontal nanowire technology

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorHellings, Geert
dc.contributor.authorScholz, Mirko
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMertens, Hans
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorBoschke, Roman
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMocuta, Anda
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-24T03:25:54Z
dc.date.available2021-10-24T03:25:54Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28016
dc.sourceIIOimport
dc.titlevfTLP characteristics of ESD diodes in bulk Si gate-all-around vertically stacked horizontal nanowire technology
dc.typeMeeting abstract
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage6B.1.1
dc.source.endpage6B.1.7
dc.source.conference39th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD
dc.source.conferencedate10/09/2017
dc.source.conferencelocationTucson, AZ USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8073454/
imec.availabilityPublished - open access


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