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Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

dc.contributor.authorChew, Soon Aik
dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorDemuynck, Steven
dc.contributor.authorMannaert, Geert
dc.contributor.authorKunnen, Eddy
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorDangol, Anish
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLeusink, Gert
dc.contributor.authorWajda, Cory
dc.contributor.authorHakamata, T
dc.contributor.authorHasegawa, T
dc.contributor.authorTapily, K
dc.contributor.authorClark, R
dc.date.accessioned2021-10-24T03:27:14Z
dc.date.available2021-10-24T03:27:14Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28023
dc.sourceIIOimport
dc.titleUltralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal
dc.typeProceedings paper
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorDangol, Anish
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage3
dc.source.conferenceIEEE International Interconnect Technology Conference - IITC
dc.source.conferencedate16/05/2017
dc.source.conferencelocationHsinchu Taiwan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7968969/
imec.availabilityPublished - open access


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