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2D self-aligned via patterning strategy with EUV single exposure in 3nm technology

dc.contributor.authorChoi, Suhyeong
dc.contributor.authorLee, Jae Uk
dc.contributor.authorBlanco, Victor
dc.contributor.authorKim, Ryan Ryoung han
dc.contributor.authorShin, Youngsoo
dc.date.accessioned2021-10-24T03:28:48Z
dc.date.available2021-10-24T03:28:48Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28031
dc.sourceIIOimport
dc.title2D self-aligned via patterning strategy with EUV single exposure in 3nm technology
dc.typeProceedings paper
dc.contributor.imecauthorLee, Jae Uk
dc.contributor.imecauthorBlanco, Victor
dc.contributor.imecauthorKim, Ryan Ryoung han
dc.contributor.orcidimecLee, Jae Uk::0000-0002-9434-5055
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1014321
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography VIII
dc.source.conferencedate26/02/2017
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/10143/1014321/2D-self-aligned-via-patterning-strategy-with-EUV
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 10143


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