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The impact of the Ge content on the characteristics of strained Si1-xGex epitaxial diodes before and after degradation by high energy particles

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorHakata, T.
dc.contributor.authorKobayashi, K.
dc.contributor.authorSunaga, H.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-01T08:35:40Z
dc.date.available2021-10-01T08:35:40Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2823
dc.sourceIIOimport
dc.titleThe impact of the Ge content on the characteristics of strained Si1-xGex epitaxial diodes before and after degradation by high energy particles
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage548
dc.source.endpage551
dc.source.conferenceProceedings of the 28th European Solid-State Device Research Conference - ESSDERC'98
dc.source.conferencedate8/09/1998
dc.source.conferencelocationBordeaux France
imec.availabilityPublished - open access


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