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Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVD
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Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVD
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Date
2017
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Dhayalan, Sathish Kumar
;
Nuytten, Thomas
;
Loo, Roger
;
Rosseel, Erik
;
Hikavyy, Andriy
;
Shimura, Yosuke
;
Vandervorst, Wilfried
Journal
ECS Journal of Solid State Science and Technology
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Views
1900
since deposited on 2021-10-24
1
last month
1
last week
Acq. date: 2026-08-06
Citations