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Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorSchaekers, Marc
dc.contributor.authorYu, Hao
dc.contributor.authorWang, Linlin
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorDate, Lucien
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorHollar, Kelly
dc.contributor.authorKhaja, Fareen
dc.contributor.authorAderhold, Wolfgang
dc.contributor.authorMayur, Abhilash
dc.contributor.authorLee, JaeYoung
dc.contributor.authorvan Meer, Hans
dc.contributor.authorJiang, Yu-Long
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-24T04:39:09Z
dc.date.available2021-10-24T04:39:09Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28319
dc.sourceIIOimport
dc.titleSub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation
dc.typeProceedings paper
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage214
dc.source.endpage215
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate5/06/2017
dc.source.conferencelocationKyoto Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998176/
imec.availabilityPublished - open access


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