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First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications

dc.contributor.authorFlorent, Karine
dc.contributor.authorLavizzari, Simone
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorVecchio, Emma
dc.contributor.authorPotoms, Goedele
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-24T04:46:16Z
dc.date.available2021-10-24T04:46:16Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28342
dc.sourceIIOimport
dc.titleFirst demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications
dc.typeProceedings paper
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorPotoms, Goedele
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage158
dc.source.endpage159
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate5/06/2017
dc.source.conferencelocationKyoto Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998162/
imec.availabilityPublished - open access


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