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dc.contributor.authorFolkersma, Steven
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorSchulze, Andreas
dc.contributor.authorPetersen, D.H.
dc.contributor.authorHansen, O.
dc.contributor.authorHenrichsen, H.
dc.contributor.authorNielsen, P.F.
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-24T04:48:08Z
dc.date.available2021-10-24T04:48:08Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28348
dc.sourceIIOimport
dc.titleElectrical resistance measurements of individual nanometer-wide Si fins
dc.typeMeeting abstract
dc.contributor.imecauthorFolkersma, Steven
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.source.peerreviewno
dc.source.beginpageM.LM.11
dc.source.conferenceEMRS Fall Meeting Symposium M: Material and device integration on silicon for advanced applications
dc.source.conferencedate18/09/2017
dc.source.conferencelocationWarsaw Poland
dc.identifier.urlhttps://www.european-mrs.com/material-and-device-integration-silicon-advanced-applications-emrs
imec.availabilityPublished - imec


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