dc.contributor.author | Franco, Jacopo | |
dc.contributor.author | Putcha, Vamsi | |
dc.contributor.author | Vais, Abhitosh | |
dc.contributor.author | Sioncke, Sonja | |
dc.contributor.author | Waldron, Niamh | |
dc.contributor.author | Zhou, Daisy | |
dc.contributor.author | Rzepa, Gerhard | |
dc.contributor.author | Roussel, Philippe | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Heyns, Marc | |
dc.contributor.author | Collaert, Nadine | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Grasser, Tibor | |
dc.contributor.author | Kaczer, Ben | |
dc.date.accessioned | 2021-10-24T04:48:32Z | |
dc.date.available | 2021-10-24T04:48:32Z | |
dc.date.issued | 2017 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/28349 | |
dc.source | IIOimport | |
dc.title | Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Franco, Jacopo | |
dc.contributor.imecauthor | Putcha, Vamsi | |
dc.contributor.imecauthor | Vais, Abhitosh | |
dc.contributor.imecauthor | Waldron, Niamh | |
dc.contributor.imecauthor | Zhou, Daisy | |
dc.contributor.imecauthor | Roussel, Philippe | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.imecauthor | Kaczer, Ben | |
dc.contributor.orcidimec | Franco, Jacopo::0000-0002-7382-8605 | |
dc.contributor.orcidimec | Putcha, Vamsi::0000-0003-1907-5486 | |
dc.contributor.orcidimec | Vais, Abhitosh::0000-0002-0317-7720 | |
dc.contributor.orcidimec | Roussel, Philippe::0000-0002-0402-8225 | |
dc.contributor.orcidimec | Groeseneken, Guido::0000-0003-3763-2098 | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 175 | |
dc.source.endpage | 178 | |
dc.source.conference | IEEE International Electron Devices Meeting - IEDM | |
dc.source.conferencedate | 2/12/2017 | |
dc.source.conferencelocation | San Francisco, CA USA | |
dc.identifier.url | http://ieeexplore.ieee.org/document/8268347/ | |
imec.availability | Published - open access | |