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Optimizing the MOS capacitor design to study large area 2D-oxide interface

dc.contributor.authorGaur, Abhinav
dc.contributor.authorLin, Dennis
dc.contributor.authorChiappe, Daniele
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorMocuta, Dan
dc.contributor.authorHeyns, Marc
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-10-24T04:57:29Z
dc.date.available2021-10-24T04:57:29Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28376
dc.sourceIIOimport
dc.titleOptimizing the MOS capacitor design to study large area 2D-oxide interface
dc.typeMeeting abstract
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.source.peerreviewyes
dc.source.beginpage2.7
dc.source.conference48th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate6/12/2017
dc.source.conferencelocationSan Diego, CA USA
dc.identifier.urlhttp://www.ieeesisc.org/programs/2017_SISC_technical_program.pdf
imec.availabilityPublished - imec


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