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Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress

dc.contributor.authorGrasser, T.
dc.contributor.authorWaltl, M.
dc.contributor.authorPuschkarsky, K.
dc.contributor.authorStampfer, B.
dc.contributor.authorRzepa, G.
dc.contributor.authorPobegen, G.
dc.contributor.authorReisinger, H.
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-24T05:13:07Z
dc.date.available2021-10-24T05:13:07Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28422
dc.sourceIIOimport
dc.titleImplications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
dc.typeProceedings paper
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage6A-2.1
dc.source.endpage6A-2.6
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7936334/
imec.availabilityPublished - open access


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