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Atomic layer etching of amorphous silicon with selectivity towards MoS2 for novel MX2 heterostructure device concepts

dc.contributor.authorHeyne, Markus
dc.contributor.authorGoodyear, Andy
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorCooke, Mike
dc.contributor.authorNeyts, Erik C.
dc.contributor.authorRadu, Iuliana
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-24T05:43:20Z
dc.date.available2021-10-24T05:43:20Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28505
dc.sourceIIOimport
dc.titleAtomic layer etching of amorphous silicon with selectivity towards MoS2 for novel MX2 heterostructure device concepts
dc.typeProceedings paper
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.conference10th Plasma Etch and Strip for Microtechnology Workshop - PESM
dc.source.conferencedate19/10/2017
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttp://pesm-conference.org/index.php/program
imec.availabilityPublished - imec


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