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dc.contributor.authorHopf, Toby
dc.contributor.authorErcken, Monique
dc.contributor.authorMannaert, Geert
dc.contributor.authorKunnen, Eddy
dc.contributor.authorTao, Zheng
dc.contributor.authorVandenbroeck, Nadia
dc.contributor.authorSebaai, Farid
dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorMertens, Hans
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDemuynck, Steven
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-24T05:49:10Z
dc.date.available2021-10-24T05:49:10Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28520
dc.sourceIIOimport
dc.titleCMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks
dc.typeProceedings paper
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorVandenbroeck, Nadia
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.identifier.doi10.1117/12.2257668
dc.source.peerreviewyes
dc.source.beginpage1014618
dc.source.conferenceAdvances in Patterning Materials and Processes XXXIV
dc.source.conferencedate26/02/2017
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 10146


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