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Characterization and modelling of growth-induced defects in InGaAs by MOCVD

dc.contributor.authorHsu, Brent
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-24T05:56:01Z
dc.date.available2021-10-24T05:56:01Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28537
dc.sourceIIOimport
dc.titleCharacterization and modelling of growth-induced defects in InGaAs by MOCVD
dc.typeMeeting abstract
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewno
dc.source.conferenceE-MRS
dc.source.conferencedate18/05/2017
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec


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